蓝箭 BRD50N06 TO-252 N沟道MOS场效应管

　　蓝箭 BRD50N06 TO-252 N沟道MOS场效应管

　　Absolute Maximum Ratings(Ta=25℃)

　　< Drain-Source Breakdown Voltage: 100V

　　< Zero Gate Voltage Drain Current

　　VDS=100V VGS=0V: 1μA

　　VDS=100V TJ=55℃: 50μA

　　< Gate-Body Leakage Current Forward: 100nA

　　< Gate Threshold Voltage: 1V 1.9V 3V

　　< Static Drain-Source On-Resistance RDS(on)

　　VGS=10V ID=8.5A: 75~90mΩ

　　TJ=125℃: 142mΩ

　　< Drain-Source Diode Forward Voltage: 1.0~1.2V

　　< Gate resistance: 1.3Ω

　　< Input Capacitance: 250pF

　　< Output Capacitance: 125pF

　　< Reverse Transfer Capacitance: 20pF

　　< Total Gate Charge(10V) : 5.8nC

　　< Total Gate Charge(4.5V): 2.81nC

　　< Gate Source Charge: 1.1nC

　　< Gate Drain Charge: 1.2nC

　　< Turn-On Delay Time: 6ns

　　< Turn-On Rise Time: 2.5ns

　　< Turn-Off Delay Time: 18ns

　　< Turn-Off Fall Time: 2.5ns

　　Applications

　　Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products.