蓝箭电子 BRCS3710RA N沟道MOS场效应管
Descriptions
N-CHANNEL MOSFET in a TO-252 Plastic Package.
Absolute Maximum Ratings(Ta=25℃)
Drain-Source Voltage: 100V
Drain Current : 59A
Pulsed Drain Current: 240A
Gate-Source Voltage: ±20V
Avalanche Current: 15A
Single Pulsed Avalanche Energy: 170mJ
Total Power Dissipation: 73W
Junction and Storage Temperature Range: -55 to 150 ℃
Junction-to-Ambient t ≤ 10s: 20℃/W
Junction-to-Ambient Steady-State: 50℃/W
Junction-to-Case Steady-State: 1.7℃/W